transistors 1 publication date: april 2003 sjc00237bed 2SD1994A silicon npn epitaxial planar type for low-frequency power strengthening and drive complementary to 2sb1322a features ? low collector-emitter saturation voltage v ce(sat) ? allowing supply with the radial taping absolute maximum ratings t a = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 60 v collector-emitter voltage (base open) v ceo 50 v emitter-base voltage (collector open) v ebo 5v collector current i c 1a peak collector current i cp 1.5 a collector power dissipation * p c 1w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 060v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 05v collector-base cutoff current (emitter open) i cbo v cb = 20 v, i e = 0 0.1 a forward current transfer ratio * 1 h fe1 * 2 v ce = 10 v, i c = 500 ma 85 340 ? h fe2 v ce = 5 v, i c = 1 a 50 collector-emitter saturation voltage * 1 v ce(sat) i c = 500 ma, i b = 50 ma 0.2 0.4 v base-emitter saturation voltage * 1 v be(sat) i c = 500 ma, i b = 50 ma 0.85 1.20 v transition frequency * 1 f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 11 20 pf (common base, input open circuited) electrical characteristics t a = 25 c 3 c unit: mm 6.9 0.1 2.5 0.1 0.45 1.05 0.05 2.5 0.5 123 2.5 0.5 +0.10 ?0.05 0.45 +0.10 ?0.05 (0.8) (0.5) (1.0) (1.0) 4.5 0.1 14.5 0.5 4.0 0.7 0.65 max. (0.2) 1: emitter 2: collector 3: base mt-2-a1 package note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: pulse measurement * 2: rank classification rank q r s no rank h fe1 85 to 170 120 to 240 170 to 340 85 to 340 product of no-rank classification is not marked. note) * : printed circuit board: copper foil area of 1 cm 2 or more, and the board thickness of 1.7 mm for the collector portion
2SD1994A 2 sjc00237bed v ce(sat) ? i c v be(sat) ? i c h fe ? i c p c ? t a i c ? v ce i c ? i b f t ? i e c ob ? v cb v cer ? r be 0 160 40 120 80 0 1.2 1.0 0.8 0.6 0.4 0.2 copper plate at the collector is more than 1 cm 2 in area, 1.7 mm in thickness collector power dissipation p c ( w ) ambient temperature t a ( c ) 010 8 26 4 0 1.50 1.25 1.00 0.75 0.50 0.25 t a = 25 c i b = 10 ma 9 ma 8 ma 7 ma 6 ma 5 ma 4 ma 3 ma 2 ma 1 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) 012 10 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 v ce = 10 v t a = 25 c base current i b ( ma ) collector current i c ( a ) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i c / i b = 10 25 c ? 25 c t a = 100 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.01 0.1 1 10 100 i c / i b = 10 t a = ? 25 c 25 c 100 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0 500 400 300 200 100 v ce = 10 v t a = 100 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( a ) ? 1 ? 10 ? 100 0 200 160 120 80 40 v cb = 10 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 1 10 100 0 60 50 40 30 20 10 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf) 0.1 1 10 100 0 120 100 80 60 40 20 i c = 10 ma t a = 25 c base-emitter resistance r be ( k ? ) collector-emitter voltage (resistor between b and e) v cer (v)
2SD1994A 3 sjc00237bed i ceo ? t a safe operation area 0160 40 120 80 1 10 10 2 10 3 10 4 v ce = 10 v ambient temperature t a ( c ) i ceo ( t a ) i ceo ( t a = 25 c ) 0.1 1 10 100 0.001 0.01 0.1 1 10 single pulse t a = 25 c t = 10 ms t = 1 s i cp i c collector current i c ( a ) collector-emitter voltage v ce ( v )
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